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h8na60f datasheet & applicatoin notes – Datasheet Archive

We Provode 6 months warranty for our product. Information furnished is believed to be accurate and reliable. Specification mentioned in this publication are subject to change without notice. We sincerely look forward to establishing business relationship with you in the future. Source-drain Diode Forward Characteristics. Drain Current continuous at T.

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H8NA60FI pdf Datasheet P1 Part Num IC-ON-LINE

dataaheet Normalized Gate Threshold Voltage vs Temperature. With 11 years of professional experience in distribution in this area, we own a big and professional sale team with members from all over the world.

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H8NA60FI View Datasheet(PDF) – STMicroelectronics

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Return it and get a full refund, or B: No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Source-drain Current Source-drain Current pulsed. Good international reputation our company. Other freight methods may be available at checkout – you can also contact me first for details. Drain- gate Voltage R. Covers your purchase price and original shipping.


Gat e-body Leakage Current V. Normally days via registered air mail Total Price: Thermal Impedance for TO Gat e Threshold Voltage V.

Gate Charge vs Gate-source Voltage. Single Pulse Avalanche Energy starting T. If you have any need or question for electronic components, feel free to contact us. Images are for reference only See Product Specifications.

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We can also ship via registered air mail, Normally will take days to airrive at your office. I take care in describing my goods as honestly and accurately as I can. Turn-off Drain-source Voltage Slope. Static Drain-source On Resistance. Pulse width limited by safe operating area. We promise to provide high quality products with competitive prices, fast delivery and excellent services for our customers. Search field Part name Part description.