Ease of Paralleling. Maximum Ratings. TOAB. IRF IRF IRF NJ Semi-Conductors encourages customers to verify that datasheets are current. IRF A, V, Ohm, N-channel Power MOSFET. This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power. Part, IRF Category, Discrete => Transistors => FETs (Field Effect Transistors) => MOSFETs => N-Channel. Description, A, V, Ohm, N-channel.
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IRF Datasheet(PDF) – Vishay Siliconix
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Reliability data for Silicon Technology and Package Dataeheet represent a composite of all qualified locations. B, Mar This datasheet is subject to change without notice. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. Datsheet, Mar 7 8 9 10 Fig.
Case Temperature td off tf tr Fig. The TOAB package is universally preferred datssheet all commercial-industrial applications at power dissipation levels to approximately 50 W. To the maximum extent permitted by applicable datasueet, Vishay disclaims i any and all liability arising out of the application or use of any product, ii any and all liability, including without limitation special, consequential or incidental damages, and iii any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability.
Drain Current Current regulator Same type as D.
The low thermal resistance and low package cost of the TOAB contribute to its wide acceptance throughout the industry. Repetitive rating; pulse width limited by maximum junction temperature see fig.